Manual

VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
2
Document Number: 93488
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 2 mA, T
J
= 25 °C 600 - -
VCollector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 400 A, T
J
= 25 °C - 1.6 2.05
V
GE
= 15 V, I
C
= 400 A, T
J
= 175 °C - 2.0 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 4 mA, T
J
= 25 °C 4.0 - 6.5
Zero gate voltage collector current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 400 V, I
C
= 400 A, R
g
= 1.3 ,
V
GE
= ± 15 V, T
J
= 25 °C
-35-
ns
Rise time t
r
-70-
Turn-off delay time t
d(off)
- 180 -
Fall time t
f
-75-
Turn-on switching loss E
on
- 14.1 -
mJ
Turn-off switching loss E
off
- 10.0 -
Turn-on delay time t
d(on)
V
CC
= 400 V, I
C
= 400 A, R
g
= 1.3 ,
V
GE
= ± 15 V, T
J
= 175 °C
-37-
ns
Rise time t
r
-72-
Turn-off delay time t
d(off)
- 220 -
Fall time t
f
-84-
Turn-on switching loss E
on
- 23.2 -
mJ
Turn-off switching loss E
off
- 16.8 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
- 30.8 -
nFOutput capacitance C
oes
-2.12-
Reverse transfer capacitance C
res
-0.92-
SC data I
SC
t
sc
 5 μs, V
GE
= 15 V, T
J
= 125 °C, 
V
CC
= 360 V, V
CEM
 600 V
-TBD- A
Internal gate resistance R
gint
-1.3- 
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 400 A
T
J
= 25 °C - 1.38 1.80
V
T
J
= 125 °C - 1.41 -
Diode reverse recovery charge Q
rr
I
F
= 400 A, V
R
= 300 V,
dI/dt = - 7000 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 15.5 -
μC
T
J
= 125 °C - 28.5 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 265 -
A
T
J
= 125 °C - 335 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 3.5 -
mJ
T
J
= 125 °C - 7.5 -