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VS-GT400TH60N www.vishay.
VS-GT400TH60N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS VGE = 0 V, IC = 2 mA, TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.6 2.05 VGE = 15 V, IC = 400 A, TJ = 175 °C - 2.0 6.5 UNITS Collector to emitter saturation voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4 mA, TJ = 25 °C 4.
VS-GT400TH60N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 175 TStg - 40 - 125 - - 0.094 - - 0.158 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case per ½ module RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GT400TH60N www.vishay.com Vishay Semiconductors 900 800 IC, module 700 IC (A) 600 500 400 300 200 100 0 0 93488_05 100 200 300 400 500 600 700 VCE (V) Fig. 5 - RBSOA Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C ZthJC (K/W) 1 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 93488_06 12 800 700 10 600 8 E (mJ) IC (A) 500 400 300 Erec 6 4 200 150 °C 2 25 °C 100 0 0 0 0.5 1.0 1.5 2.0 VF (V) 93488_07 Fig.
VS-GT400TH60N www.vishay.com Vishay Semiconductors 8 7 6 Erec E (mJ) 5 4 3 2 1 0 0 2 4 6 8 10 12 Rg (Ω) 93488_09 Fig. 9 - Diode Switching Loss vs. Gate Resistance VCC = 600 V, IC = 400 A, VGE = - 15 V, TJ = 125 °C ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 93488_10 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 06-Aug-12 www.vishay.
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