User Manual

VS-GT400TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
5
Document Number: 94748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E (mJ)
R
g
(Ω)
036 1291518
0
40
20
10
5
15
30
25
35
E
rec
V
CC
= 600 V
I
F
= 400 A
V
GE
= - 15 V
T
J
= 125 °C
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
Diode
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95525