User Manual

VS-GT400TH120N
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Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94748
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. P
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
--150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.059
K/WDiode - - 0.106
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
I
C
(A)
V
CE
(V)
0 0.5 1.51.0 2.0 2.5 3.0 3.5
0
800
400
200
100
300
500
700
600
125 °C
25 °C
V
GE
= 15 V
I
C
(A)
V
GE
(V)
894 5 6 7 10 11 12
800
400
100
0
200
600
500
300
700
25 °C
V
CE
= 20 V
125 °C
E
on
, E
off
(mJ)
I
C
(A)
0 800600400200
0
50
25
75
125
100
150
E
off
E
on
V
CC
= 600 V
R
g
= 1.8 Ω
V
GE
= ± 15 V
T
J
= 125 °C
E
on
, E
off
(mJ)
R
g
(Ω)
012
1815
963
0
80
40
120
200
160
E
on
V
CC
= 600 V
I
C
= 400 A
V
GE
= ± 15 V
T
J
= 125 °C
E
off