User Manual

VS-GT400TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
2
Document Number: 94748
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 400 A, T
J
= 25 °C - 1.70 2.15
V
GE
= 15 V, I
C
= 400 A, T
J
= 125 °C - 2.0 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 16 mA, T
J
= 25 °C 5.0 5.8 6.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 400 A, R
g
= 1.8 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 250 -
ns
Rise time t
r
-39-
Turn-off delay time t
d(off)
- 500 -
Fall time t
f
- 100 -
Turn-on switching loss E
on
- 17.0 -
mJ
Turn-off switching loss E
off
- 42.0 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 400 A, R
g
= 1.8 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 299 -
ns
Rise time t
r
-46-
Turn-off delay time t
d(off)
- 605 -
Fall time t
f
- 155 -
Turn-on switching loss E
on
- 25.1 -
mJ
Turn-off switching loss E
off
- 61.9 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 28.8 -
nFOutput capacitance C
oes
-1.51-
Reverse transfer capacitance C
res
-1.31-
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 600 V, V
CEM
 1200 V
- 1600 - A
Internal gate resistance R
gint
-1.9- 
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 400 A
T
J
= 25 °C - 1.65 2.15
V
T
J
= 125 °C - 1.65 -
Diode reverse recovery charge Q
rr
I
F
= 400 A, V
R
= 600 V,
dI/dt = - 6000 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 44 -
μC
T
J
= 125 °C - 78 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 490 -
A
T
J
= 125 °C - 555 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 19.0 -
mJ
T
J
= 125 °C - 35.1 -