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VS-GT400TH120N www.vishay.
VS-GT400TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.70 2.15 VGE = 15 V, IC = 400 A, TJ = 125 °C - 2.0 6.5 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 16 mA, TJ = 25 °C 5.0 5.
VS-GT400TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.059 - - 0.106 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GT400TH120N www.vishay.com Vishay Semiconductors 1000 800 IC (A) IC, module 600 400 Rg = 1.8 Ω VGE = ± 15 V TJ = 125 °C 200 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 0.1 ZthJC (K/W) IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 60 800 700 50 600 25 °C 40 E (mJ) IF (A) 500 400 300 Erec 30 20 200 VCC = 600 V Rg = 1.8 Ω VGE = - 15 V TJ = 125 °C 125 °C 10 100 0 0 0 0.5 1.0 1.5 2.0 2.
VS-GT400TH120N www.vishay.com Vishay Semiconductors 40 35 30 Erec E (mJ) 25 20 15 10 VCC = 600 V IF = 400 A VGE = - 15 V TJ = 125 °C 5 0 0 3 6 9 12 15 18 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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