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VS-GT300YH120N www.vishay.
VS-GT300YH120N www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum power dissipation SYMBOL PD TEST CONDITIONS MAX.
VS-GT300YH120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V - 35.2 - - 26.3 - UNITS IGBT Turn-on switching loss Eon Turn-off switching loss Eoff Turn-on delay time td(on) - 776 - tr - 263 - - 816 - - 131 - Rise time Turn-off delay time td(off) Fall time tf VCC = 600 V, IC = 300 A, Rg = 4.
VS-GT300YH120N Vishay Semiconductors 160 600 140 500 VGE = 12 V 400 100 80 60 VGE = 9 V 300 200 40 100 20 0 0 0 50 100 150 200 250 300 0 350 400 1 2 3 4 5 IC - Continuous Collector Current IGBT (A) VCE (V) Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig.
VS-GT300YH120N www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) 6 TJ = 25 °C VGEth (V) 5 4 TJ = 125 °C 3 0 2 4 6 8 10 12 120.00 100.00 80.00 60.00 40.00 20.00 0 14 10 20 30 40 50 60 IC (mA) IF - Continuous Forward Current (A) Fig. 7 - Typical IGBT Gate Threshold Voltage Fig. 10 - Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode 100 160.00 90 140.00 80 120.00 70 100.00 TJ = 25 °C 60 IF (A) Allowable Case Temperature (°C) 140.
VS-GT300YH120N www.vishay.com Vishay Semiconductors 10 000 40 Energy (mJ) 30 td(off) Eon Switching Time (ns) VCC = 600 V Rg = 4.7 Ω VGE = 15 V L = 500 μH Eoff 20 10 td(on) 1000 tr tf 100 10 0 0 50 100 150 200 250 300 350 0 10 20 Ic (A) Rg (Ω) Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH Fig. 13 - Typical IGBT Energy Loss vs.
VS-GT300YH120N www.vishay.com Vishay Semiconductors 6000 50 40 A, TJ = 125 °C 5000 Irr (A) 4000 Qrr (nC) TJ = 125 °C 40 10 A, TJ = 125 °C 3000 30 20 TJ = 25 °C 2000 1000 10 A, TJ = 25 °C 10 40 A, TJ = 25 °C 0 0 100 200 300 400 500 100 200 Fig. 19 - Typical Qrr Antiparallel Diode vs. diF/dt, Vrr = 400 V 500 Fig. 21 - Typical Irr Chopper Diode vs.
VS-GT300YH120N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig.
VS-GT300YH120N www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters Mounting depth max.11 2.8 x 0.5 16 28 4 1 28 31 3 7 11 6 10 2 8 4 9 5 15 30 48 61.4 20.1 35.4 6. 27 Ø 26 7.2 ± 0.6 23 30.5 6 3-M6 6 22 6 93 106.4 Revision: 25-Jul-13 Document Number: 94681 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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