Instruction Manual
Preliminary
VS-GT250TX120U
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-13
1
Document Number: 93618
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
X-MAP Power Module
Half-Bridge - Trench IGBT, 250 A
FEATURES AND BENEFITS
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED antiparallel diodes with soft reverse recovery
•T
J
maximum = 175 °C
• Fully isolated package
• Industry standard outline
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
• Product reliability results valid for T
J
= 150 °C
• Recommended operation temperature T
op
= 150 °C
PRODUCT SUMMARY
IGBT
V
CES
1200 V
V
CE(on)
(typical) at 250 A, 25 °C 2.42 V
I
D(DC)
at 80 °C 250 A
HEXFRED
®
t
rr
(typical) 170 ns
I
F(DC)
at 88 °C 250 A
Type Modules - IGBT
Package X-MAP
X-MAP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
IGBT
Drain to source voltage V
CES
1200 V
Continuous collector current, V
GE
at 15 V I
C
T
C
= 25 °C 334
A
T
C
= 80 °C 250
Pulsed collector current I
CM
n/a
Clamped inductive load current I
LM
n/a
Power dissipation P
D
T
C
= 25 °C 1250
W
T
C
= 80 °C 792
Gate to source voltage V
GS
± 30 V
HEXFRED
Peak repetitive reverse voltage V
RRM
1200 V
Continuous forward current I
F
T
C
= 25 °C 354
AT
C
= 80 °C 265
Peak repetitive forward current I
FSM
n/a
Power dissipation P
D
T
C
= 25 °C 1071
W
T
C
= 80 °C 679
MODULE
Operating junction temperature range T
J
- 55 to + 175
°C
Storage temperature range T
Stg
- 40 to + 175
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 s 3500 V