Manual
VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
8
Document Number: 93990
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
D
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- Trench IGBT technology
3
- Current rating (175 = 175 A)
4
- Circuit configuration (D = Single switch with antiparallel diode)
5
- Package indicator (A = SOT-227)
6
- Voltage rating (120 = 1200 V)
8
7
- Speed/type (U = Ultrafast)
Device code
5
1
32 4 6 7 8
GVS- T 175 D A 120 U
3 (C)
2 (G)
1, 4 (E)
1
43
2
Lead Assignment