Manual

VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
2
Document Number: 93990
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 1200 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A - 1.73 2.1
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 1.98 2.2
V
GE
= 15 V, I
C
= 75 A, T
J
= 150 °C - 2.05 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA - 5 -
V
CE
= V
GE
, I
C
= 7.5 mA 4.9 5.9 7.9
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C - 2.9 -
Temperature coefficient of threshold
voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.9 100 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.85 10
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 4 20
Forward voltage drop, diode V
FM
I
F
= 40 A, V
GE
= 0 V - 3.12 3.44
VI
F
= 40 A, V
GE
= 0 V, T
J
= 125 °C - 3.15 3.47
I
F
= 40 A, V
GE
= 0 V, T
J
= 150 °C - 3.25 -
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 150 A (t
p
< 400 μs, D < 2 %),
V
CC
= 600 V, V
GE
= 15 V
- 830 -
nCGate to emitter charge (turn-on) Q
ge
- 180 -
Gate to collector charge (turn-on) Q
gc
- 380 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 7200 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail
and diode
recovery
Diode used
HFA16PB120
-4.03-
mJTurn-off switching loss E
off
-6.9-
Total switching loss E
tot
- 10.93 -
Turn-on delay time t
d(on)
- 310 -
ns
Rise time t
r
-65-
Turn-off delay time t
d(off)
- 325 -
Fall time t
f
- 170 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 7200 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
-5.07-
mJTurn-off switching loss E
off
- 10.59 -
Total switching loss E
tot
- 15.66 -
Turn-on delay time t
d(on)
- 325 -
ns
Rise time t
r
-80-
Turn-off delay time t
d(off)
- 330 -
Fall time t
f
- 235 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 450 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V, L = 500 μH
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 400 V
- 164 - ns
Diode peak reverse current I
rr
-12- A
Diode recovery charge Q
rr
- 994 - nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 400 V, T
J
= 125 °C
- 230 - ns
Diode peak reverse current I
rr
- 16.5 - A
Diode recovery charge Q
rr
- 1864 - nC
Short circuit safe operating area SCSOA
T
J
= 150 °C, R
g
= 22 ,
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
p
= 1200 V
10 μs