Manual

VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
1
Document Number: 93990
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
Note
(1)
Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
•Square RBSOA
• 10 μs short circuit capability
•HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery
•T
J
maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Low EMI, requires less snubbing
Note
(1)
Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 175 A at 90 °C
(1)
V
CE(on)
typical at 100 A, 25 °C 1.73 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
(1)
T
C
= 25 °C 288
A
T
C
= 90 °C 175
Pulsed collector current I
CM
450
Clamped inductive load current I
LM
450
Diode continuous forward current I
F
T
C
= 25 °C 54
T
C
= 90 °C 32
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 1087
W
T
C
= 90 °C 522
Power dissipation, diode P
D
T
C
= 25 °C 219
T
C
= 90 °C 105
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V