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VS-GT175DA120U www.vishay.
VS-GT175DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Forward voltage drop, diode Gate to emitter leakage current VFM IGES TEST CONDITIONS MIN. TYP. MAX.
VS-GT175DA120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.115 - - 0.57 - 0.05 - Mounting torque, on terminals and heatsink - - 1.
VS-GT175DA120U Vishay Semiconductors 140 120 100 80 TJ = 150 °C 60 TJ = 125 °C 40 20 TJ = 25 °C 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VCE - Collector-to-Emitter Current (A) IC - Collector to Emitter Current (A) www.vishay.com IC = 100 A 2.0 IC = 80 A 1.8 IC = 60 A 1.6 IC = 40 A 1.4 1.2 1.0 0.8 20 40 60 80 100 120 140 160 VGE - Gate-to-Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 5 - Typical IGBT Transfer Characteristics Fig.
VS-GT175DA120U www.vishay.com Vishay Semiconductors 40 310 Eon 290 250 230 20 trr (ns) Energy Losses (mJ) 270 30 Eoff TJ = 125 °C 210 190 170 150 10 TJ = 25 °C 130 110 0 0 10 20 30 40 90 100 50 1000 dIF/dt (A/μs) Rg (Ω) Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt, of Diode, at IF = 50 A, VR = 400 V Fig. 11 - Typical IGBT Energy Loss vs.
VS-GT175DA120U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 PDM 0.25 0.01 t1 0.1 0.05 0.02 DC t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.75 0.50 0.1 0.25 0.1 PDM 0.05 0.01 0.02 DC t1 t2 Notes: 1. Duty factor D = t1/t2 2.
VS-GT175DA120U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig.
VS-GT175DA120U www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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