Owner manual

VS-GT150TH120N
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Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94758
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
--150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.143
K/WDiode - - 0.244
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
I
C
(A)
V
CE
(V)
0 0.5 1.51.0 2.0 2.5 3.0
3.5
0
200
100
50
150
250
300
125 °C
25 °C
V
GE
= 15 V
I
C
(A)
V
GE
(V)
200
50
0
100
300
250
150
8965 7 10 11 12
V
CE
= 20 V
125 °C
25 °C
0
10
20
30
40
50
60
0 50 100 150 200 250 300
I
C
(A)
E
on
, E
off
(mJ)
E
off
E
on
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 600 V
0
15
30
45
60
75
90
0
10
20 30 40 50
R
g
(Ω)
E
on
, E
off
(mJ)
E
off
E
on
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 150 A
V
CC
= 600 V