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VS-GT150TH120N www.vishay.
VS-GT150TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 150 A, TJ = 25 °C - 1.70 2.15 VGE = 15 V, IC = 150 A, TJ = 125 °C - 1.90 6.5 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 6.0 mA, TJ = 25 °C 5.0 5.
VS-GT150TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.143 - - 0.244 - 0.035 - °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GT150TH120N www.vishay.com Vishay Semiconductors 350 300 IC, module IC (A) 250 200 150 100 Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC (K/W) 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 12 300 250 10 25 °C 8 E (mJ) IF (A) 200 125 °C 150 Erec 6 100 4 50 2 0 VCC = 600 V Rg = 4.7 Ω VGE = - 15 V TJ = 125 °C 0 0 0.5 1 1.5 2 2.
VS-GT150TH120N www.vishay.com Vishay Semiconductors 12 10 E (mJ) 8 Erec 6 4 VCC = 600 V IC = 150 A VGE = - 15 V TJ = 125 °C 2 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance Rg 0.1 ZthJC (K/W) Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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