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VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • Material categorization: For definitions of compliance please see www.vishay.
VS-GT140DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 1.7 2.0 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.
VS-GT140DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 175 °C IGBT Junction to case thermal resistance RthJC Diode - - 0.23 - - 0.63 °C/W Case to sink thermal resistance, flat greased surface RthCS - 0.1 - Mounting torque, on termianls and heatsink T - - 1.
VS-GT140DA60U Vishay Semiconductors VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 140 120 100 TJ = 175 °C 80 60 40 TJ = 125 °C TJ = 25 °C 20 0 2.4 IC = 100 A 2.2 2 IC = 75 A 1.8 IC = 50 A 1.6 1.4 IC = 25 A 1.2 1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 40 80 100 120 140 160 180 TJ - Junction Temperature (°C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
VS-GT140DA60U www.vishay.com Vishay Semiconductors 6 2000 VR = 200 V IF = 50 A Eon 5.5 1500 4 Eoff 3.5 Qrr (nC) Energy Losses (mJ) 5 4.5 3 2.5 125 °C 1000 2 1.5 500 1 25 °C 0.5 0 0 10 20 30 40 0 100 50 1000 Rg (Ω) dIF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V, Diode used: 60APH06 Fig. 14 - Typical Stored Charge vs.
VS-GT140DA60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 PDM D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.
VS-GT140DA60U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id 19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T.
VS-GT140DA60U www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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