Manual
VS-GB90SA120U
www.vishay.com
Vishay Semiconductors
Revision:02-Aug-12
6
Document Number: 94725
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14b - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Single switch, no
antiparallel diode
S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
t = 5 µs
t
d(on)
t
f
t
r
90 %
t
d(off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
E
ts
= (E
on
+ E
off
)
1
2
3
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- B = IGBT Generation 5
3
- Current rating (90 = 90 A)
4
- Circuit configuration (S = Single switch without antiparallel diode)
5
- Package indicator (A = SOT-227)
6
- Voltage rating (120 = 1200 V)
8
7
- Speed/type (U = Ultrafast IGBT)
Device code
5
1
32 4 6 7 8
GVS- B 90 S A 120 U
3 (C)
2 (G)
1, 4 (E)
1
43
2
Lead Assignment