Manual

VS-GB90SA120U
www.vishay.com
Vishay Semiconductors
Revision:02-Aug-12
1
Document Number: 94725
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
FEATURES
• NPT Generation V IGBT technology
•Square RBSOA
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
Note
(1)
Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 90 A at 90 °C
V
CE(on)
typical at 75 A, 25 °C 3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
(1)
T
C
= 25 °C 149
A
T
C
= 90 °C 90
Pulsed collector current I
CM
200
Clamped inductive load current I
LM
200
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 862
W
T
C
= 90 °C 414
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V