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VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.
VS-GB90SA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 75 A - 3.3 3.
VS-GB90SA120U 160 140 120 DC 100 80 60 40 20 0 20 60 80 100 120 140 160 100 TJ = 150 °C 10 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 0 200 400 600 800 1000 1200 IC - Continuous Collector Current (A) VCES - Collector-to-Emitter Voltage (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current 200 6 VGE = 15 V 150 TJ = 125 °C 100 TJ = 150 °C TJ = 25 °C 50 0 TJ = 25 °C 5.5 5 4.5 4 TJ = 125 °C 3.5 3 2.
VS-GB90SA120U www.vishay.com Vishay Semiconductors 5 14 3.5 3 2.5 2 Eon 12 Eoff 4 Energy Losses (mJ) Switching Energy (mJ) 4.5 Eon 1.5 1 10 Eoff 8 6 4 2 0.5 0 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 40 50 Rg (Ω) IC - Collector Current (A) Fig. 7 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V, Diode used HFA16PB120 Fig. 9 - Typical IGBT Energy Loss vs.
VS-GB90SA120U www.vishay.com Vishay Semiconductors 1000 IC (A) 100 10 1 10 100 1000 10 000 VCE (V) Fig. 12 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max.) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.
VS-GB90SA120U www.vishay.com Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td(off) 10 % 5% IC tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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