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VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.
VS-GB90DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Forward voltage drop, diode VFM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX.
VS-GB90DA120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range IGBT Junction to case thermal resistance Diode Case to sink thermal resistance, flat, greased surface SYMBOL MIN. TYP. TJ, TStg - 40 - RthJC RthCS MAX. UNITS - 150 °C - 0.145 - - 0.35 °C/W - 0.05 - Mounting torque, on terminals and heatsink - - 1.
VS-GB90DA120U Vishay Semiconductors 100 VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 90 80 70 60 TJ = 125 °C 50 40 30 TJ = 25 °C 20 10 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 4.5 IC = 100 A 4 IC = 75 A 3.5 3 IC = 50 A 2.5 IC = 25 A 2 1.5 1 0 8.5 9.0 20 Fig. 5 - Typical IGBT Transfer Characteristics 80 100 120 140 160 Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 100 5 4.
VS-GB90DA120U www.vishay.com Vishay Semiconductors 14 3000 VR = 200 V IF = 50 A Eon 12 Qrr (nC) Energy Losses (mJ) 2500 10 Eoff 8 6 2000 125 °C 1500 4 25 °C 1000 2 0 500 0 10 20 30 40 50 100 Rg (Ω) dIF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V, Diode used HFA16PB120 Fig. 14 - Stored Charge vs.
VS-GB90DA120U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 PDM 0.25 0.01 t1 0.1 0.05 0.02 DC 0.001 0.0001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.75 0.50 0.1 0.25 PDM 0.1 0.05 0.01 t1 0.02 t2 DC Notes: 1. Duty factor D = t1/t2 2.
VS-GB90DA120U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max.) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig.
VS-GB90DA120U www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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