User guide

VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
1
Document Number: 94822
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 75 A
FEATURES
High short circuit capability, self limiting to 6 x I
C
10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
Rugged with ultrafast performance
Square RBSOA
Low inductance case
Fast and soft reverse recovery antiparallel FWD
Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Switching mode power supplies
Inductive heating
•UPS
Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 75 A
V
CE(on)
(typical)
at I
C
= 75 A, 25 °C
3.2 V
Package INT-A-PAK
Circuit Half Bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 20
Collector current I
C
T
C
= 25 °C 105
A
T
C
= 80 °C 75
Pulsed collector current I
CM
(1)
t
p
= 1 ms 150
Diode continuous forward current I
F
75
Diode maximum forward current I
FM
150
Maximum power dissipation P
D
T
J
= 150 °C 500 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V
I
2
t-value, diode I
2
tV
R
= 0 V, t = 10 ms, T
J
= 125 °C 1170 A
2
s