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VS-GB75TP120U www.vishay.
VS-GB75TP120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 3.2 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.7 - 4.5 5.1 5.
VS-GB75TP120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.25 - - 0.40 - 0.05 - °C IGBT (per 1/2 module) Junction to case RthJC Diode (per 1/2 module) Case to sink Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GB75TP120U www.vishay.com Vishay Semiconductors 15 103 VCC = 600 V td(off) td(on) tf 9 t (ns) VGE (V) 12 6 3 102 tr VCC = 600 V Rg = 15 Ω VGE = ± 15 V TJ = 125 °C IC = 75 A TJ = 25 °C 0 0 250 500 750 101 1000 0 25 50 Qg (nC) 75 100 125 150 175 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Times vs.
VS-GB75TP120U www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) IGBT 10-1 10-2 10-3 10-4 10-3 10-2 10-1 100 t (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-May-13 www.vishay.com/doc?95524 Document Number: 94822 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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