Owner manual

VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
2
Document Number: 94712
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1.0 mA, T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A, T
J
= 25 °C - 1.80 2.20
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 2.05 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 3.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 10 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 305 -
ns
Rise time t
r
-67-
Turn-off delay time t
d(off)
- 328 -
Fall time t
f
- 187 -
Turn-on switching loss E
on
-6.74-
mJ
Turn-off switching loss E
off
-4.25-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 10 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 310 -
ns
Rise time t
r
-67-
Turn-off delay time t
d(off)
- 347 -
Fall time t
f
- 337 -
Turn-on switching loss E
on
-9.75-
mJ
Turn-off switching loss E
off
-7.05-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz,
T
J
= 25 °C
-5.22-
nFOutput capacitance C
oes
-0.40-
Reverse transfer capacitance C
res
-0.26-
SC data I
SC
t
s
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 420 - A
Internal gate rsistance R
GINT
-3-
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
-0.75- m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 75 A
T
J
= 25 °C - 1.70 2.10
V
T
J
= 125 °C - 1.75 -
Reverse recovery charge Q
rr
I
F
= 75 A, V
R
= 600 V,
dI
F
/dt = 1300 A/μs
V
GE
= - 15 V
T
J
= 25 °C - 4.01 -
μC
T
J
= 125 °C - 9.29 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 55 -
A
T
J
= 125 °C - 73 -
Reverse recovery energy E
rec
T
J
= 25 °C - 2.89 -
mJ
T
J
= 125 °C - 4.46 -