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VS-GB75TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.vishay.
VS-GB75TP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1.0 mA, TJ = 25 °C 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.80 2.20 VGE = 15 V, IC = 75 A, TJ = 125 °C - 2.05 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 7.
VS-GB75TP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - - 150 °C TStg - 40 - 125 °C - - 0.23 - - 1.32 - 0.05 - Maximum junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case per ½ module RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GB75TP120N www.vishay.com Vishay Semiconductors 160 140 IC, Module 120 IC (A) 100 80 60 40 Rg = 10 Ω VGE = ± 15 V TJ = 125 °C 20 0 0 250 500 750 1000 1250 1500 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 150 6 125 5 4 25 °C E (mJ) IF (A) 100 Erec 75 125 °C 3 50 2 25 1 0 VCC = 600 V Rg = 10 Ω VGE = - 15 V TJ = 125 °C 0 0 0.5 1 1.5 2 2.5 VF (V) Fig.
VS-GB75TP120N www.vishay.com Vishay Semiconductors 5 4.5 4 E (mJ) 3.5 Erec 3 2.5 2 1.5 VCC = 600 V IC = 75 A VGE = - 15 V TJ = 125 °C 1 0.5 0 0 20 60 40 80 100 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 ZthJC (K/W) DIODE 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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