Instruction Manual

VS-GB75LP120N
www.vishay.com
Vishay Semiconductors
Revision: 01-Feb-13
2
Document Number: 94825
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A, T
J
= 25 °C - 1.82 -
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 2.05 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 3.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 4.7 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 140 -
ns
Rise time t
r
-37-
Turn-off delay time t
d(off)
- 370 -
Fall time t
f
-55-
Turn-on switching loss E
on
-7.2-
mJ
Turn-off switching loss E
off
-4.5-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 4.7 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 150 -
ns
Rise time t
r
-40-
Turn-off delay time t
d(off)
- 400 -
Fall time t
f
-64-
Turn-on switching loss E
on
-9.0-
mJ
Turn-off switching loss E
off
-7.4-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
-5.52-
nFOutput capacitance C
oes
-0.40-
Reverse transfer capacitance C
res
-0.26-
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 420 - A
Internal gate resistance R
gint
-3-
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 75 A
T
J
= 25 °C - 2.05 -
V
T
J
= 125 °C - 2.25 -
Diode reverse recovery charge t
rr
I
F
= 75 A, V
R
= 600 V,
dI
F
/dt = - 2000 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 100 -
μC
T
J
= 125 °C - 125 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 80 -
A
T
J
= 125 °C - 100 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 3.0 -
mJ
T
J
= 125 °C - 6.0 -