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VS-GB75LP120N www.vishay.
VS-GB75LP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.82 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 2.05 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.
VS-GB75LP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.19 - - 0.48 - 0.05 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT (per 1/2 module) Junction to case Diode (per 1/2 module) Case to sink RthJC Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB75LP120N www.vishay.com Vishay Semiconductors 103 20 td(off) VCC = 600 V td(on) t (ns) VGE (V) 15 10 102 tf tr VCC = 600 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 5 IC = 75A TJ = 25 °C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 101 0 0.7 50 100 150 Qg (μC) IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Time vs. IC 1 104 Cies VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C td(off) 0 t (ns) C (nF) 103 Coes td(on) tr tf 102 Cres 0.
VS-GB75LP120N www.vishay.com Vishay Semiconductors 100 Diode IGBT ZthJC (K/W) 10-1 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions Revision: 01-Feb-13 www.vishay.com/doc?95524 Document Number: 94825 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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