User guide

VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
4
Document Number: 94791
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage
Fig. 7 - Typical Switching Times
Fig. 8 - Typical Switching Times vs. Gate Resistance R
g
Fig. 9 - Typical forward Characteristics (Diode)
- 10
0
10
20
0
134562
V
GE
(V)
Q
g
(μC)
T
J
= 25 °C
I
C
= 600 A
V
CC
= 600 V
C (nF)
V
CE
(V)
10
1
10
2
10
0
10
-1
01015520253035
C
res
C
ies
C
oes
0 200 600 800 1000 1200400
t (ns)
10
2
10
3
10
1
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 3 Ω
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
C
(A)
t (ns)
R
g
(Ω)
10
3
10
4
10
2
10
1
0 5 10 15 20 25
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 600 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
F
(A)
V
F
(V)
01 2 3
800
1000
1200
600
400
200
0
25 °C
125 °C