Owner's manual

VS-GB50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
3
Document Number: 94820
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT (per 1/2 module)
R
thJC
- - 0.28
K/WDiode (per 1/2 module) - - 0.49
Case to sink R
thCS
Conductive grease applied - 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight of module 150 g
100
90
80
70
60
50
40
30
20
10
0
0 0.5 1.51 2 2.5 3
V
CE
(V)
I
C
(A)
V
GE
= 15 V
25 °C
125 °C
100
90
80
70
60
50
40
30
20
10
0
67 98101112
V
GE
(V)
I
C
(A)
V
CE
= 20 V
25 °C
125 °C
0
5
10
15
20
25
020406080100
I
C
(A)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 15 Ω
V
CC
= 600 V
E
on
E
off
0
5
10
15
20
25
020406080100
R
g
(Ω)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 600 V
E
on
E
off