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VS-GB50TP120N www.vishay.
VS-GB50TP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1.0 mA, TJ = 25 °C 1200 - - VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.75 2.15 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.0 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 2.
VS-GB50TP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.28 - - 0.49 - 0.05 - Operating junction temperature Storage temperature range TEST CONDITIONS °C IGBT (per 1/2 module) Junction to case RthJC Diode (per 1/2 module) Case to sink Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GB50TP120N www.vishay.com Vishay Semiconductors 120 105 90 IC, Module IC (A) 75 60 45 30 Rg = 15 Ω VGE = ± 15 V TJ = 125 °C 15 0 0 250 500 750 1000 1250 1500 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 100 4 90 3.5 VCC = 600 V Rg = 15 Ω VGE = - 15 V TJ = 125 °C 80 3 25 °C 60 E (mJ) IC (A) 70 125 °C 50 40 2.5 Erec 2 1.5 30 1 20 0.5 10 0 0 0 0.5 1 1.5 2 2.5 VF (V) Fig.
VS-GB50TP120N www.vishay.com Vishay Semiconductors 3 2.5 E (mJ) 2 Erec 1.5 1 VCC = 600 V IC = 50 A VGE = - 15 V TJ = 125 °C 0.5 0 0 20 40 60 80 100 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-May-13 www.vishay.
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