Owner's manual

VS-GB50NP120N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
2
Document Number: 93418
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C - 1.70 -
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 1.95 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 2 mA, T
J
= 25 °C 5.0 6.2 7.0
Zero gate voltage collector current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 18 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 220 -
ns
Rise time t
r
-60-
Turn-off delay time t
d(off)
- 420 -
Fall time t
f
-60-
Turn-on switching loss E
on
-2.1-
mJ
Turn-off switching loss E
off
-2.6-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 18 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 270 -
ns
Rise time t
r
-60-
Turn-off delay time t
d(off)
- 500 -
Fall time t
f
-65-
Turn-on switching loss E
on
-4.1-
mJ
Turn-off switching loss E
off
-4.7-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
-4.29-
nFOutput capacitance C
oes
-0.30-
Reverse transfer capacitance C
res
-0.20-
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 270 - A
Internal gate resistance R
gint
-10- 
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m