Manual

VS-GB50LP120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
3
Document Number: 93418
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Fig. 1 - Typical Output Characteristics
V
GE
= 15 V
Fig. 2 - Typical Transfer Characteristics
V
CE
= 20 V
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 50 A
T
J
= 25 °C - 2.15 -
V
T
J
= 125 °C - 2.35 -
Diode reverse recovery time t
rr
I
F
= 50 A, V
R
= 600 V,
dI/dt = - 2100 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 90 -
ns
T
J
= 125 °C - 130 -
Diode peak reverse recovery current I
RM
T
J
= 25 °C - 52 -
A
T
J
= 125 °C - 60 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 1.9 -
mJ
T
J
= 125 °C - 4.0 -
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
per ½ module
IGBT
R
thJC
- - 0.28
K/WDiode - - 0.65
Case to sink R
thCS
Conductive grease applied - 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 150 g
I
C
(A)
V
CE
(V)
0312 4
0
93418_01
171
57
28.5
114
85.5
142.5
T
J
= 125 °C
T
J
= 25 °C
I
C
(A)
V
GE
(V)
02 513 64897111210 13
93418_02
171
85.5
28.5
0
142.5
57
114
T
J
= 125 °C
T
J
= 25 °C