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VS-GB400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: For definitions of compliance please see www.vishay.
VS-GB400TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 400 A, TJ = 125 °C - 2.1 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 16 mA, TJ = 25 °C 5.0 6.
VS-GB400TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.048 - - 0.085 - 0.032 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case, per 1/2 module Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB400TH120N www.vishay.com Vishay Semiconductors 20 103 16 td(off) VCC = 600 V 8 t (ns) VGE (V) 12 4 td(on) tr 102 tf 0 VCC = 600 V Rg = 2.5 Ω VGE = ± 15 V TJ = 125 °C IC = 150 A TJ = 25 °C -4 101 -8 0 1 2 3 4 5 0 200 400 600 800 1000 Qg - (μC) IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Time vs.
VS-GB400TH120N www.vishay.com Vishay Semiconductors 100 Diode ZthJC - (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 06-Mar-13 www.vishay.com/doc?95538 Document Number: 94788 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 2.8 x 0.5 23 ± 0.3 7.2 ± 0.5 31 ± 0.5 16 26 12 4.5 3-M6 30.5 ± 0.5 Mounting depth max. 11 28 ± 0.3 6 22 35.6 27 ± 0.4 0.2 30 48 ± 0.4 70 .4 ± 20.2 15 ± 0.4 Ø6 28 ± 0.3 6 93 ± 0.4 106.6 Revision: 27-May-13 Document Number: 95538 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
