Manual

VS-GB400AH120U
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
3
Document Number: 94790
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. Collector Current
Fig. 4 - IGBT Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range T
J
--150°C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
per module
IGBT
R
thJC
- - 0.044
K/WDiode - - 0.088
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 300 g
0
012345
100
200
300
400
500
600
700
800
I
C
(A)
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
0
100
200
300
400
500
600
700
800
54 67
8
9
10
11
V
GE
(V)
I
C
(A)
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
E
on
, E
off
(mJ)
0
20
40
60
80
100
120
0 200 400 600 800
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 2.2 Ω
V
CC
= 600 V
R
g
(Ω)
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25
E
on
E
off
VGE = ± 15 V
T
J
= 125 °C
I
C
= 400 A
V
CC
= 600 V
E
on
, E
off
(mJ)