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VS-GB400AH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: For definitions of compliance please see www.vishay.
VS-GB400AH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 400 A, TJ = 125 °C - 3.45 3.60 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4 mA, TJ = 25 °C 4.4 4.
VS-GB400AH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 150 °C TStg - 40 - 125 °C - - 0.044 - - 0.088 - 0.035 - IGBT Junction to case per module RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB400AH120U www.vishay.com Vishay Semiconductors 900 800 700 IC, Module 600 IC (A) 500 400 300 Rg = 2.2 Ω VGE = ± 15 V TJ = 125 °C 200 100 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 10-1 ZthJC (K/W) IGBT 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 800 35 700 30 600 25 Erec E (mJ) IF (A) 500 125 °C 400 300 25 °C 20 15 10 200 VCC = 600 V Rg = 2.2 Ω VGE = - 15 V TJ = 125 °C 5 100 0 0 0 0.5 1 1.5 2 2.
VS-GB400AH120U www.vishay.com Vishay Semiconductors 30 25 E (mJ) 20 Erec 15 10 VCC = 600 V IC = 400 A VGE = - 15 V 5 TJ = 125 °C 0 0 5 10 15 20 25 Rg (Ω) Fig. 9 - Diode Switching Loss vs.Rg 100 DIODE ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 2 1 5 3 LINKS TO RELATED DOCUMENTS Dimensions Revision: 27-May-13 www.vishay.
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