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VS-GB400AH120N www.vishay.
VS-GB400AH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.9 - VGE = 15 V, IC = 400 A, TJ = 125 °C - 2.1 7.0 UNITS Collector to emitter saturation voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 8 mA, TJ = 25 °C 5.0 6.
VS-GB400AH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - 40 - 150 TStg - 40 - 125 - - 0.05 - - 0.09 - 0.035 - °C IGBT Junction to case per module Diode Case to sink RthJC RthCS UNITS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB400AH120N www.vishay.com Vishay Semiconductors 20 1000 td(off) td(on) t (ns) VGE (V) 10 100 tr 0 tf - 10 10 0 1 2 3 4 5 0 Qg (μC) 93483_05 200 400 600 800 IC (A) 93483_07 Fig. 7 - Typical Switching Times vs. IC VCC = 600 V, Rg = 4 , VGE = ± 15 V, TJ = 125 °C Fig. 5 - Gate Charge Characteristics VCC = 600 V, IC = 400 A, TJ = 25 °C 100 10 000 Cies td(off) 10 1000 td(on) t (ns) C (nF) Coes tr Cres 1 100 tf 10 0.
VS-GB400AH120N www.vishay.com Vishay Semiconductors 1 Diode ZthJC (K/W) 0.1 IGBT 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 tp (s) 93483_10 Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 2 3 5 LINKS TO RELATED DOCUMENTS Dimensions Revision: 06-Aug-12 www.vishay.com/doc?95526 Document Number: 93483 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.
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