6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-GB300TH120U www.vishay.
VS-GB300TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 300 A, TJ = 125 °C - 3.45 6.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C 4.4 5.
VS-GB300TH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.059 - - 0.107 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque 300 g 100 600 VCC = 600 V Rg = 3.
VS-GB300TH120U www.vishay.com Vishay Semiconductors 700 600 IC, module IC (A) 500 400 300 200 Rg = 3.3 Ω VGE = ± 15 V TJ = 125 °C 100 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 1 0.1 IGBT 0.01 0.001 0.0001 0.001 0.1 0.01 1 t (s) Fig. 6 - IGBT Transient Thermal Impedance 35 600 30 500 25 °C 300 E (mJ) IF (A) 25 400 125 °C Erec 20 15 200 VCC = 600 V Rg = 3.3 Ω VGE = - 15 V TJ = 125 °C 10 100 5 0 0 0 0.5 1 1.5 2 2.
VS-GB300TH120U www.vishay.com Vishay Semiconductors 24 21 E (mJ) 18 15 Erec 12 9 VCC = 600 V IC = 300 A VGE = - 15 V TJ = 125 °C 6 3 0 0 5 10 15 20 25 30 35 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance 1 ZthJC (K/W) Diode 0.1 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
