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VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: For definitions of compliance please see www.vishay.
VS-GB300TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 2.00 2.45 VGE = 15 V, IC = 300 A, TJ = 125 °C - 2.20 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 12 mA, TJ = 25 °C 5.0 6.
VS-GB300TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.076 - - 0.100 - 0.035 - °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque 300 600 g 100 VCC = 600 V Rg = 4.
VS-GB300TH120N www.vishay.com Vishay Semiconductors 700 600 IC, module IC (A) 500 400 300 200 Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 100 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 0.1 ZthJC (K/W) IGBT 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 600 40 35 500 25 °C 30 25 E (mJ) IF (A) 400 300 125 °C Erec 20 15 200 VCC = 600 V Rg = 4.7 Ω VGE = - 15 V TJ = 125 °C 10 100 5 0 0 0 0.5 1 1.5 2 2.
VS-GB300TH120N www.vishay.com Vishay Semiconductors 25 E (mJ) 20 Erec 15 10 VCC = 600 V IF = 300 A VGE = - 15 V TJ = 125 °C 5 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance Rg ZthJC (K/W) 1 0.1 Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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