Instruction Manual

VS-GB200TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
4
Document Number: 94754
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
0
50
100
150
200
250
300
350
400
450
500
0 300 600 900 1200 1500
V
CE
(V)
I
C
(A)
R
g
= 4.7 Ω
V
GE
= 15 V
T
J
= 125 °C
I
C
, Module
I
GBT
0.001
0.01
0.1
1
0.0001 0.001
0.01
0.1 1
t (s)
Z
thJC
- Thermal Impedance (K/W)
0
50
100
150
200
250
300
400
350
0 0.5 1 1.5 2 2.5 3
V
F
(V)
I
F
(A)
25 °C
125 °C
I
C
(A)
E (mJ)
0
4
8
12
16
20
24
0 80 160 240 320 400
E
rec
V
CC
= 600 V
R
g
= 4.7 Ω
V
GE
= - 15 V
T
J
= 125 °C