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VS-GB200TH120U www.vishay.
VS-GB200TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 200 A, TJ = 125 °C - 3.45 6.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 2.0 mA, TJ = 25 °C 4.4 4.
VS-GB200TH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.095 - - 0.140 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB200TH120U www.vishay.com Vishay Semiconductors 500 450 400 IC, Module IC (A) 350 300 250 200 150 Rg = 4.7 Ω VGE = 15 V TJ = 125 °C 100 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 1 IGBT 0.1 0.01 0.001 0.0001 0.001 0.1 0.01 1 t (s) Fig. 6 - IGBT Transient Thermal Impedance 400 24 350 20 300 16 25 °C E (mJ) IF (A) 250 125 °C 200 150 Erec 12 8 VCC = 600 V Rg = 4.7 Ω VGE = - 15 V TJ = 125 °C 100 4 50 0 0 0 0.5 1 1.5 2 2.
VS-GB200TH120U www.vishay.com Vishay Semiconductors 16 14 E (mJ) 12 10 Erec 8 6 VCC = 600 V IC = 200 A VGE = - 15 V TJ = 125 °C 4 2 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance 1 ZthJC (K/W) Diode 0.1 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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