Owner's manual

VS-GB200TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
4
Document Number: 94763
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I
C
(A)
V
CE
(V)
0 300 900600 1200 1500
0
200
250
300
350
400
450
100
50
150
R
g
= 5.1 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Z
thJC
- Thermal Impedance (K/W)
IGBT
V
F
(V)
I
F
(A)
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3
125 °C
25 °C
0
5
10
15
20
25
0 80 240160 320 400
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 5.1 Ω
V
GE
= - 15 V
T
J
= 125 °C