Owner's manual

VS-GB200TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94763
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
--150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.11
K/WDiode - - 0.14
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
0
50
100
200
300
400
0 0.5 1.5 2.5 3.51234
150
250
350
125 °C
25 °C
V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
50
100
200
300
400
4 5 7 9 11681012
150
250
350
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
V
GE
(V)
0 80 240160 320 400
E
on
, E
off
(mJ)
0
10
20
30
40
50
60
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.1 Ω
V
CC
= 600 V
I
C
(A)
E
on
E
off
010 3020 40 50
E
on
, E
off
(mJ)
0
20
40
60
80
100
120
V
GE
= ± 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
(Ω)
I
C
= 200 A
E
on
E
off