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VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE(on) SPT+ IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.
VS-GB200TH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.90 2.35 VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.10 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 8.0 mA, TJ = 25 °C 5.0 6.
VS-GB200TH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.11 - - 0.14 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight 300 g 60 400 350 VCC = 600 V Rg = 5.
VS-GB200TH120N www.vishay.com Vishay Semiconductors 450 400 350 IC, module IC (A) 300 250 200 150 100 Rg = 5.1 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA ZthJC - Thermal Impedance (K/W) 100 IGBT 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 25 400 350 20 25 °C 300 Erec 200 E (mJ) IF (A) 250 125 °C 150 15 10 VCC = 600 V Rg = 5.1 Ω VGE = - 15 V TJ = 125 °C 100 5 50 0 0 0 0.5 1 1.5 2 2.
VS-GB200TH120N www.vishay.com Vishay Semiconductors 25 VCC = 600 V IC = 200 A VGE = - 15 V TJ = 125 °C E (mJ) 20 15 Erec 10 5 0 0 10 20 30 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Gate Resistance Rg 1 ZthJC (K/W) 0.1 Diode 0.01 0.001 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-Sep-12 www.vishay.
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