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VS-GB200NH120N www.vishay.
VS-GB200NH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.8 - VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.0 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4 mA, TJ = 25 °C 5.0 6.
VS-GB200NH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - 40 - 150 TSTG - 40 - 125 - - 0.08 - - 0.17 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT (per 1/2 module) Junction to case Diode (per 1/2 module) Case to sink RthJC Conductive grease applied RthCS Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB200NH120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) t (ns) VGE (V) 10 td(on) 102 tr 0 tf VCC = 600 V Rg = 5 Ω VGE = ± 15 V TJ = 125 °C IC = 200 A TJ = 25 °C - 10 2 1 0 101 3 0 100 Qg (μC) 200 300 400 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Time vs.
VS-GB200NH120N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (K/W) 100 Diode 10 -1 IGBT 10-2 10-3 10-4 10-5 10-5 10-4 10-3 10-2 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 16-Jan-13 www.vishay.com/doc?95525 Document Number: 94759 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.
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