Owner's manual

VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
Revision: 19-Oct-12
2
Document Number: 94714
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter saturation voltage V
CE(sat)
V
GE
= 15 V, I
C
= 150 A, T
J
= 25 °C - 3.10 3.60
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C - 3.45 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1.5 mA, T
J
= 25 °C 4.4 5.2 6.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 612 -
ns
Rise time t
r
- 116 -
Turn-off delay time t
d(off)
- 546 -
Fall time t
f
- 125 -
Turn-on switching loss E
on
- 17.7 -
mJ
Turn-off switching loss E
off
-8.9-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 609 -
ns
Rise time t
r
- 116 -
Turn-off delay time t
d(off)
- 564 -
Fall time t
f
- 148 -
Turn-on switching loss E
on
- 17.5 -
mJ
Turn-off switching loss E
off
- 11.0 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
- 12.7 -
nFOutput capacitance C
oes
-1.14-
Reverse transfer capacitance C
res
-0.46-
SC data I
SC
t
p
 10 μs, V
GE
= 15 V, T
J
= 25 °C,
V
CC
= 600 V, V
CEM
 1200 V
- 1400 - A
Internal gate rsistance R
g
-2.4- 
Stray inductance L
CE
- - 18 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.32 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 1.75 2.15
V
T
J
= 125 °C - 1.80 -
Reverse recovery charge Q
rr
I
F
= 150 A, V
R
= 600 V,
dI
F
/dt = - 1500 A/μs
V
GE
= - 15 V
T
J
= 25 °C - 8.2 -
μC
T
J
= 125 °C - 19.1 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 85 -
A
T
J
= 125 °C - 125 -
Reverse recovery energy E
rec
T
J
= 25 °C - 4.2 -
mJ
T
J
= 125 °C - 8.4 -