6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-GB150TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: For definitions of compliance please see www.vishay.
VS-GB150TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 150 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 150 A, TJ = 125 °C - 3.45 - UNITS Collector to emitter saturation voltage VCE(sat) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 1.5 mA, TJ = 25 °C 4.4 5.2 6.
VS-GB150TH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - - 150 °C TStg - 40 - 125 °C - - 0.109 - - 0.180 - 0.035 - Maximum junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case RJC Diode Case to sink (Conductive grease applied) RCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GB150TH120U www.vishay.com Vishay Semiconductors 350 300 IC, Module IC (A) 250 200 150 100 Rg = 6.8 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 100 IGBT ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 12 300 250 10 25 °C Erec 8 E (mJ) IF (A) 200 125 °C 150 6 4 100 VCC = 600 V Rg = 6.8 Ω VGE = - 15 V TJ = 125 °C 2 50 0 0 0 0.5 1 1.5 2 2.
VS-GB150TH120U www.vishay.com Vishay Semiconductors 12 10 E (mJ) 8 Erec 6 4 VCC = 600 V IC = 150 A VGE = - 15 V TJ = 125 °C 2 0 0 10 30 20 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 DIODE ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 19-Oct-12 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
