User Manual

VS-GB100TP120U
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
4
Document Number: 94823
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
250
200
150
100
50
0
V
CE
(V)
I
C
(A)
0 350 1050700 1400
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
Module
Chip
t (s)
Z
thJC
(K/W)
10
0
10
-1
10
-2
10
-3
10
-1
10
0
10
-2
10
-3
10
-4
IGBT
0 0.5 1.51232.5
V
F
(V)
I
F
(A)
200
180
160
140
120
100
80
60
40
20
0
125 °C
25 °C
0 50 150100 200
I
F
(V)
E (mJ)
10
12
8
6
4
2
0
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
rec