User Manual

VS-GB100TP120U
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
3
Document Number: 94823
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT (per 1/2 module)
R
thJC
- - 0.17
K/WDiode (per 1/2 module) - - 0.36
Case to sink R
thCS
Conductive grease applied - 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight of module 150 g
01 3245
V
CE
(V)
I
C
(A)
V
GE
= 15 V
200
180
160
140
120
100
80
60
40
20
0
125 °C
25 °C
200
180
160
140
120
100
80
60
40
20
0
56 87 9 10 11
V
GE
(V)
I
C
(A)
125 °C
V
CE
= 20 V
25 °C
0 50 150100 200
E
off
I
C
(A)
E
on
, E
off
(mJ)
0
20
10
5
15
25
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
on
R
g
(
Ω
)
E
on
, E
off
(mJ)
010 3020 40 50 60
0
20
10
5
15
25
30
35
40
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V
E
on
E
off