User Manual

VS-GB100TP120U
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
2
Document Number: 94823
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 3.45 3.90
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 3.75 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1 mA, T
J
= 25 °C 4.4 5.0 6.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 2.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 310 -
ns
Rise time t
r
-64-
Turn-off delay time t
d(off)
- 350 -
Fall time t
f
- 105 -
Turn-on switching loss E
on
-4.76-
mJ
Turn-off switching loss E
off
-4.25-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 328 -
ns
Rise time t
r
-65-
Turn-off delay time t
d(off)
- 350 -
Fall time t
f
- 132 -
Turn-on switching loss E
on
-7.20-
mJ
Turn-off switching loss E
off
-5.50-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz, 
T
J
= 25 °C
-4.30-
nFOutput capacitance C
oes
-0.40-
Reverse transfer capacitance C
res
-0.16-
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C, 
V
CC
= 900 V, V
CEM
 1200 V
- 310 - A
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 2.05 2.45
V
T
J
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 600 V,
dI
F
/dt = - 1950 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 5.4 -
μC
T
J
= 125 °C - 11.2 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 81 -
A
T
J
= 125 °C - 101 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 3.54 -
mJ
T
J
= 125 °C - 6.57 -