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VS-GB100TP120N www.vishay.
VS-GB100TP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1.0 mA, TJ = 25 °C 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.80 2.20 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.05 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4.
VS-GB100TP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - - 150 TSTG - 40 - 125 - - 0.19 - - 0.28 - 0.05 - Operating junction temperature Storage temperature range TEST CONDITIONS °C IGBT (per 1/2 module) Junction to case RthJC Diode (per 1/2 module) Case to sink Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GB100TP120N www.vishay.com Vishay Semiconductors 220 200 180 IC, Module 160 IC (A) 140 120 100 80 60 Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 40 20 0 0 250 500 750 1000 1250 1500 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 10 175 9 VCC = 600 V Rg = 5.6 Ω VGE = - 15 V TJ = 125 °C 8 150 25 °C 7 125 °C E (mJ) IF (A) 125 100 6 5 Erec 4 75 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.
VS-GB100TP120N www.vishay.com Vishay Semiconductors 8 7 E (mJ) 6 5 Erec 4 3 VCC = 600 V IC = 100 A VGE = - 15 V TJ = 125 °C 2 1 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-May-13 www.vishay.
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