Instruction Manual

VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
Revision: 20-Sep-12
2
Document Number: 93413
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 3.10 3.60
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 3.45 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1 mA, T
J
= 25 °C 4.4 4.9 6.0
Zero gate voltage collector current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, L = 200 nH, T
J
= 25 °C
- 300 -
ns
Rise time t
r
-64-
Turn-off delay time t
d(off)
- 340 -
Fall time t
f
- 105 -
Turn-on switching loss E
on
-4.76-
mJ
Turn-off switching loss E
off
-4.25-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6 ,
V
GE
= ± 15 V, L = 200 nH, T
J
= 125 °C
- 320 -
ns
Rise time t
r
-65-
Turn-off delay time t
d(off)
- 350 -
Fall time t
f
- 132 -
Turn-on switching loss E
on
-7.20-
mJ
Turn-off switching loss E
off
-5.50-
Short circuit withstand time t
SC
T
J
= 125 °C - - 10 μs
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 20 V, f = 1.0 MHz
-8.45-
nFOutput capacitance C
oes
-0.76-
Reverse transfer capacitance C
res
-0.31-
SC data I
SC
t
p
 10 μs, V
GE
= ± 15 V, V
CC
= 600 V,
V
CEM
 1200 V, T
J
= 25 °C
- 900 -
Internal gate resistance R
GINT
-2.4- 
Stray inductance L
CE
- - 18 nH
Module lead resistance, terminal to chip R
CC’+EE’
-0.32- m