User Manual

VS-GB100TH120N
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-13
3
Document Number: 94752
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 150
°C
Storage temperature range T
STG
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.150
K/WDiode - - 0.225
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
V
CE
(V)
I
C
(A)
0
40
20
60
80
120
100
140
180
160
200
0 1 1.50.5 2 2.5 3.53
125 °C
V
GE
= 15 V
25 °C
V
GE
(V)
I
C
(A)
0
50
25
75
100
150
125
200
175
5796 8 10 11 12 13
V
CE
= 20 V
25 °C
125 °C
0
5
10
15
20
25
30
0 50 100 150 200
I
C
(A)
E
ON
, E
OFF
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
off
E
on
0
5
10
15
20
25
30
35
40
0 10 20 30 40 50 60
R
g
(Ω)
E
ON
, E
OFF
(mJ)
E
off
E
on
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V